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PHOTODIODE
Si PIN photodiode
S2506/S6775/S6967 series, S6786
Plastic SIP (Single In-line Package)
S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed response and large active areas, allowing you to choose the optimum type that best matches your application.
Features
Applications
l Spatial light transmission S2506-04: Visible-cut l Optical switches S6786 : Visible to near infrared range, high sensitivity, l Laser radar, etc. high-speed response S6775, S6967: Visible to near infrared range, high sensitivity, high-speed response, large active area S6775-01, S6967-01: Visible-cut, high sensitivity, high-speed response, large active area l Plastic package: 7 x 7.8 mm l Active area size S2506 series, S6786: 2.77 x 2.77 mm S6775/S6967 series : 5.5 x 4.8 mm
s General ratings / Absolute maximum ratings
Dimensional Package outline Active area Effective active size area (mm) S2506-02 S2506-04 S6786 S6775 S6775-01 S6967 S6967-01 Plastic 5.5 x 4.8 26.4 2.77 x 2.77 (mm2) 7.7 35 50 Reverse voltage VR Max. (V) Absolute maximum ratings O p erating Power Storage dissipation te m p erature te m p erature P Topr Tstg (mW) (C) (C) 150 -25 to +85 -40 to +100
l S2506-02: Visible to near infrared range
Type No.
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Peak Spectral response sensitivity range wavelength p (nm) 320 to 1100 760 to 1100 320 to 1060 320 to 1100 700 to 1100 320 to 1060 700 to 1060 (nm) 960 900 960 900 0.56 0.4 0.48 0.5 0.25 Photo sensitivity S (A/W) p 660 n m 780 n m 830 n m T e m p. Cut-off Short Terminal coefficient frequency circuit capacitance Dark current fc of current NEP ID Ct RL=50 ID Isc f=1 MHz -3 dB TCID 100 lx Typ. Max. (A) (nA) (nA) (times/ C) (MHz) (pF) (W/Hz1/2) 7.3 0.1 *1 10 * 1 25 * 1 15 * 1 1.0 x 10-14 * 1 4.1 7.5 0.3 * 2 5 * 2 60 * 2 15 * 2 1.5 x 10-14 * 2 30 1.15 1.8 x 10-14 * 2 10 * 2 15 * 2 40 * 2 21 1.9 x 10-14 * 2 0.5 * 2 26 5 *2 50 * 2 50 * 2 2.0 x 10-14 * 2 18
Type No.
S2506-02 S2506-04 S6786 S6775 S6775-01 S6967 S6967-01 *1: VR=12 V *2: VR=10 V
0.65 0.45 0.55 0.6 0.7 0.68 0.48 0.54 0.65 0.45 0.55 0.6 0.63 0.48 0.54
1
Si PIN photodiode
s Spectral response S2506 series, S6786
(Typ. Ta=25 C) 0.8 0.7
S2506/S6775/S6967 series, S6786
S6775/S6967 series
(Typ. Ta=25 C) 0.8 0.7 S6775-01 QE=100 % 0.6 0.5 0.4 0.3 S6967-01 0.2 0.1 0 200 S6967 S6775
s Photo sensitivity temperature characteristic (S2506-02)
+1.5
(Typ.)
PHOTO SENSITIVITY (A/W)
PHOTO SENSITIVITY (A/W)
QE=100 % 0.6 0.5 0.4 0.3 0.2 0.1 0 200 S2506-02 S6786
TEMPERATURE COEFFICIENT (%/C)
+1.0
+0.5
0
S2506-04 400 600 800 1000
400
600
800
1000
-0.5 200
400
600
800
1000
WAVELENGTH (nm)
KPINB0348EA
WAVELENGTH (nm)
KPINB0349EA
WAVELENGTH (nm)
KPINB0063EC
s Dark current vs. reverse voltage
10 nA (Typ. Ta=25 C)
s Dark current vs. ambient temperature s Terminal capacitance vs. reverse voltage
10 A 1 A S6775/-01, S6967/-01 (VR=10 V)
S6967/-01
(Typ.)
1 nF
(Typ. Ta=25 C, f=1 MHz)
TERMINAL CAPACITANCE
1 nA
S6775/-01 100 pF S6786 S2506-02/-04
DARK CURRENT
S2506-02/-04 S6775/-01
DARK CURRENT
S6967/-01
100 nA S6786 (VR=10 V) S2506-02/-04 (VR=12 V) 10 nA 1 nA 100 pA 10 pA
100 pA
S6786 10 pF S2506-02/-04
S6786 10 pA
1 pA 0.01
0.1
1
10
100
1 pA -20
0
20
40
60
80
1 pF 0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0168EB
AMBIENT TEMPERATURE (C)
KPINB0169EB
REVERSE VOLTAGE (V)
KPINB0170EB
s Directivity (S2506-02)
30 20 10 0 100 % 10 (Typ. Ta=25 C) 20 30
s Dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1)
7.0 0.2 3.5 0.2 CENTER OF ACTIVE AREA ACTIVE AREA b
(6.45)
2.7 0.2 0.2 MAX.
7.8 0.2
a
80 % 40 60 % 50 40 % 60 70 80 90 20 % 80 90 60 70 50 40
14.3 1
2.3 0.3
1.0 0.5
1.1 1.4
5.08
0.5
Type No.
a 2.8 0.2
5.0
INCIDENT LIGHT
b 2.77 x 2.77 5.5 x 4.8
RELATIVE SENSITIVITY
KPINB0065EB
S2506 series S6786 (0.3) (0.4) (0.5) 1.0 (0.6) (0.5) 1.0 (0.6) (0.3) (0.4)
S6775/S6967 3.65 0.2 series
DETAILS OF LEAD ROOT
KPINA0084EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1048E02 Jun. 2006 DN

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